Methods to Fabricate and Improve Stand-alone and Integrated Filters

Embodiments of the invention provide for fabricating a filter, for electromagnetic radiation, in at least three ways, including (1) fabricating integrated thin film filters directly on a detector; (2) fabricating a free standing thin film filter that may be used with a detector; and (3) treating an existing filter to improve the filter's properties

Multi Modality Brain Mapping System (MBMS) Using Artificial Intelligence and Pattern Recognition

A Multimodality Brain Mapping System (MBMS), comprising one or more scopes (e.g., microscopes or endoscopes) coupled to one or more processors, wherein the one or more processors obtain training data from one or more first images and/or first data, wherein one or more abnormal regions and one or more normal regions are identified; receive a second image captured by one or more of the scopes at a later time than the one or more first images and/or first data and/or captured using a different imaging technique; and generate, using machine learning trained using the training data, one or more viewable indicators identifying one or abnormalities in the second image, wherein the one or more viewable indicators are generated in real time as the second image is formed. One or more of the scopes display the one or more viewable indicators on the second image

Curved-Focal-Plane Arrays Using Deformed-Membrane Photodetectors

A versatile and simple approach to the design and fabrication of curved-focal-plane arrays of silicon-based photodetectors is being developed. This approach is an alternative to the one described in "Curved Focal-Plane Arrays Using Back- Illuminated High-Purity Photodetectors" (NPO-30566), NASA Tech Briefs, Vol. 27, No. 10 (October 2003), page 10a. As in the cited prior article, the basic idea is to improve the performance of an imaging instrument and simplify the optics needed to obtain a given level of performance by making an image sensor (in this case, an array of photodetectors) conform to a curved focal surface, instead of designing the optics to project an image onto a flat focal surface. There is biological precedent for curved-focal-surface designs: retinas - the image sensors in eyes - conform to the naturally curved focal surfaces of eye lenses. The present approach is applicable to both front-side- and back-side-illuminated, membrane photodetector arrays and is being demonstrated on charge-coupled devices (CCDs). The very-large scale integrated (VLSI) circuitry of such a CCD or other array is fabricated on the front side of a silicon substrate, then the CCD substrate is attached temporarily to a second substrate for mechanical support, then material is removed from the back to obtain the CCD membrane, which typically has a thickness between 10 and 20 m. In the case of a CCD designed to operate in back-surface illumination, delta doping can be performed after thinning to enhance the sensitivity. This approach is independent of the design and method of fabrication of the front-side VLSI circuitry and does not involve any processing of a curved silicon substrate. In this approach, a third substrate would be prepared by polishing one of its surfaces to a required focal-surface curvature. A CCD membrane fabricated as described above would be pressed against, deformed into conformity with, and bonded to, the curved surface. The technique used to press and bond the CCD membrane would depend on the nature of the supporting material (see figure). For example, if the third substrate were made of quartz frit, the substrate would be prepared by suffusing it with epoxy. Then one would take advantage of the porosity of the frit by applying a partial vacuum to the opposite surface of the frit, causing atmospheric pressure to push the CCD membrane against the curved surface. The curing of the epoxy would bond the CCD membrane to the curved surface. Alternatively, if the third substrate were made of a nonporous material, the curved substrate surface would be prepared by coating it with a wax or an uncured epoxy. The CCD membrane would be pressed against the coated, curved surface by use of a suitably pressurized balloon. The CCD membrane would then become bonded to the curved surface by curing of the epoxy or freezing of the wax

Curved Focal-Plane Arrays Using Back-Illuminated High-Purity Photodetectors

Curved-focal-plane arrays of back-illuminated silicon-based photodetectors are being developed. The basic idea is to improve the performance of an imaging instrument and simplify the optics needed to obtain a given level of performance by making an image sensor (e.g., a photographic film or an array of photodetectors) conform to a curved focal surface, instead of following the customary practice of designing the optics to project an image onto a flat focal surface. Eyes are natural examples of optical systems that have curved focal surfaces on which image sensors (retinas) are located. One prior approach to implementation of this concept involves the use of curved-input-surface microchannel plates as arrays of photodetectors. In comparison with microchannel plates, these curved-focal-plane arrays would weigh less, operate at much lower voltages, and consume less power. It should also be possible to fabricate the proposed devices at lower cost. It would be possible to fabricate an array of photodetectors and readout circuitry in the form of a very-large-scale integrated (VLSI) circuit on a curved focal surface, but it would be difficult and expensive to do so. In a simple and inexpensive alternate approach, a device (see figure) would have (1) a curved back surface, onto which light would be focused; and (2) a flat front surface, on which VLSI circuitry would be fabricated by techniques that are well established for flat surfaces. The device would be made from ultrapure silicon, in which it is possible to form high-resistivity, thick photodetectors that are fully depleted through their thicknesses. (As used here, "thick means having a thickness between a fraction of a millimeter and a few millimeters.) The back surface would be polished to the curvature of the focal surface of the intended application. To enable the collection of charge carriers excited by photons near the back surface or in the bulk of the device, it would be necessary to form a transparent or semitransparent back-surface electrode, possibly by delta doping. [Delta doping is so named because its density-vs.-depth characteristic is reminiscent of the Dirac function (impulse function): the dopant is concentrated in a very thin layer - nominally, a single atomic layer.

N-Type delta Doping of High-Purity Silicon Imaging Arrays

A process for n-type (electron-donor) delta doping has shown promise as a means of modifying back-illuminated image detectors made from n-doped high-purity silicon to enable them to detect high-energy photons (ultraviolet and x-rays) and low-energy charged particles (electrons and ions). This process is applicable to imaging detectors of several types, including charge-coupled devices, hybrid devices, and complementary metal oxide/semiconductor detector arrays. Delta doping is so named because its density-vs.-depth characteristic is reminiscent of the Dirac delta function (impulse function): the dopant is highly concentrated in a very thin layer. Preferably, the dopant is concentrated in one or at most two atomic layers in a crystal plane and, therefore, delta doping is also known as atomic-plane doping. The use of doping to enable detection of high-energy photons and low-energy particles was reported in several prior NASA Tech Briefs articles. As described in more detail in those articles, the main benefit afforded by delta doping of a back-illuminated silicon detector is to eliminate a "dead" layer at the back surface of the silicon wherein high-energy photons and low-energy particles are absorbed without detection. An additional benefit is that the delta-doped layer can serve as a back-side electrical contact. Delta doping of p-type silicon detectors is well established. The development of the present process addresses concerns specific to the delta doping of high-purity silicon detectors, which are typically n-type. The present process involves relatively low temperatures, is fully compatible with other processes used to fabricate the detectors, and does not entail interruption of those processes. Indeed, this process can be the last stage in the fabrication of an imaging detector that has, in all other respects, already been fully processed, including metallized. This process includes molecular-beam epitaxy (MBE) for deposition of three layers, including metallization. The success of the process depends on accurate temperature control, surface treatment, growth of high-quality crystalline silicon, and precise control of thicknesses of layers. MBE affords the necessary nanometer- scale control of the placement of atoms for delta doping. More specifically, the process consists of MBE deposition of a thin silicon buffer layer, the n-type delta doping layer, and a thin silicon cap layer. The n dopant selected for initial experiments was antimony, but other n dopants as (phosphorus or arsenic) could be used. All n-type dopants in silicon tend to surface-segregate during growth, leading to a broadened dopant-concentration- versus-depth profile. In order to keep the profile as narrow as possible, the substrate temperature is held below 300 C during deposition of the silicon cap layer onto the antimony delta layer. The deposition of silicon includes a silicon- surface-preparation step, involving H-termination, that enables the growth of high-quality crystalline silicon at the relatively low temperature with close to full electrical activation of donors in the surface layer

Solid-state curved focal plane arrays

The present invention relates to curved focal plane arrays. More specifically, the present invention relates to a system and method for making solid-state curved focal plane arrays from standard and high-purity devices that may be matched to a given optical system. There are two ways to make a curved focal plane arrays starting with the fully fabricated device. One way, is to thin the device and conform it to a curvature. A second way, is to back-illuminate a thick device without making a thinned membrane. The thick device is a special class of devices; for example devices fabricated with high purity silicon. One surface of the device (the non VLSI fabricated surface, also referred to as the back surface) can be polished to form a curved surface

Enabling Technologies for Next Generation Ultraviolet Astrophysics, Planetary, and Heliophysics Missions

Our study sought to create a new paradigm in UV instrument design, detector technology, and optics that will form the technological foundation for a new generation of ultraviolet missions. This study brought together scientists and technologists representing the broad community of astrophysicists, planetary and heliophysics physicists, and technologists working in the UV. Next generation UV missions require major advances in UV instrument design, optics and detector technology. UV offers one of the few remaining areas of the electromagnetic spectrum where this is possible, by combining improvements in detector quantum efficiency (5-10x), optical coatings and higher-performance wide-field spectrometers (5-10x), and increasing multiplex advantage (100-1000x). At the same time, budgets for future missions are tightly constrained. Attention has begun to turn to small and moderate class missions to provide new observational capabilities on timescales that maintain scientific vitality. Developments in UV technology offer a comparatively unique opportunity to conceive of small (Explorer) and moderate (Probe, Discovery, New Millennium) class missions that offer breakthrough science. Our study began with the science, reviewing the breakthrough science questions that compel the development of new observational capabilities in the next 10-20 years. We invented a framework for highlighting the objectives of UV measurement capabilities: following the history of baryons from the intergalactic medium to stars and planets. In astrophysics, next generation space UV missions will detect and map faint emission and tomographically map absorption from intergalactic medium baryons that delineate the structure of the Universe, map the circum-galactic medium that is the reservoir of galaxy-building gas, map the warm-hot ISM of our Galaxy, explore star-formation within the Local group and beyond, trace gas in proto-planetary disks and extended atmospheres of exoplanets, and record the transient UV universe. Solar system planetary atmospheric physics and chemistry, aurorae, surface composition and magnetospheric environments and interactions will be revealed using UV spectroscopy. UV spectroscopy may even detect life on an exoplanet. Our study concluded that with UV technology developments within reach over the next 5- 10 years, we can conceive moderate-class missions that will answer many of the compelling science questions driving the field. We reviewed the science measurement requirements for these pioneering new areas and corresponding technology requirements. We reviewed and evaluated the emerging technologies, and developed a figure of merit based on potential science impact, state of readiness, required investment, and potential for highly leveraged progress in a 5-10 year horizon. From this we were able to develop a strategy for technology development. Some of this technology development will be subject to funding calls from federal agencies. A subset form a portfolio of highly promising technologies that are ideal for funding from a KISS Development Program. One of our study’s principal conclusions was that UV detector performance drives every aspect of the scientific capability of future missions, and that two highly flexible detector technologies were at the tipping point for major breakthroughs. These are Gen-2 borosilicate Atomic Layer Deposition (ALD) coated microchannel plate detectors with GaN photocathodes, and ALDantireflection (AR) coated, delta-doped photon-counting CCD detectors. Both offer the potential for QE>50% combined with large formats and pixel counts, low background, and sky-limited photon-counting performance over the 100-300 nm band. Ramped AR coatings for spectroscopic detectors could achieve QE’s as high as 80%! A second conclusion was that UV coatings are on the threshold of a major breakthrough. UV coatings permeate every aspect of telescope and instrument design. Efficient, robust, ultra-thin and highly uniform reflective coatings applied with Atomic Layer Deposition (ALD) offer the possibility of high-performance, wide-field, highly-multiplexed UV spectrometers and a broadband reach covering the scientifically critical 100-120 nm range (home of 50% of all atomic and molecular resonance lines). Our study concluded that UV coating advances made possible by ALD is the principle technology advance that will enable a joint UV-optical general astrophysics and exoEarth imaging flagship mission. A third conclusion was that the revolution in micro- and nano-fabrication technology offers a cornucopia of new possibilities for revolutionary UV technology developments in the near future. An immediate example is the application of new microlithography techniques to patterning UV diffraction gratings that are highly efficient and designed to enable wide-field, high-resolution spectroscopy. These techniques could support the development of new detectors that could discriminate optical and UV photons and potentially energy-resolving detection. Relatively modest investments in technology development over the next 5-10 years could provide advances in detectors, coatings, diffractive elements, and filters that would result in an effective increase in science capability of 100-1000! The study brought together a diverse community, led to many new ideas and collaborations, and brought cohesion and common purpose to UV practitioners. This will have a lasting and positive impact on the future of our field

Atomic Layer Deposition of Chemical Passivation Layers and High Performance Anti-Reflection Coatings on Back-Illuminated Detectors

A back-illuminated silicon photodetector has a layer of Al2O3 deposited on a silicon oxide surface that receives electromagnetic radiation to be detected. The Al2O3 layer has an antireflection coating deposited thereon. The Al2O3 layer provides a chemically resistant separation layer between the silicon oxide surface and the antireflection coating. The Al2O3 layer is thin enough that it is optically innocuous. Under deep ultraviolet radiation, the silicon oxide layer and the antireflection coating do not interact chemically. In one embodiment, the silicon photodetector has a delta-doped layer near (within a few nanometers of) the silicon oxide surface. The Al2O3 layer is expected to provide similar protection for doped layers fabricated using other methods, such as MBE, ion implantation and CVD deposition

Method for growing a back surface contact on an imaging detector used in conjunction with back illumination

A method is provided for growing a back surface contact on an imaging detector used in conjunction with back illumination. In operation, an imaging detector is provided. Additionally, a back surface contact (e.g. a delta-doped layer, etc.) is grown on the imaging detector utilizing a process that is performed at a temperature less than 450 degrees Celsius

Synthetic Foveal Imaging Technology

Synthetic Foveal imaging Technology (SyFT) is an emerging discipline of image capture and image-data processing that offers the prospect of greatly increased capabilities for real-time processing of large, high-resolution images (including mosaic images) for such purposes as automated recognition and tracking of moving objects of interest. SyFT offers a solution to the image-data processing problem arising from the proposed development of gigapixel mosaic focal-plane image-detector assemblies for very wide field-of-view imaging with high resolution for detecting and tracking sparse objects or events within narrow subfields of view. In order to identify and track the objects or events without the means of dynamic adaptation to be afforded by SyFT, it would be necessary to post-process data from an image-data space consisting of terabytes of data. Such post-processing would be time-consuming and, as a consequence, could result in missing significant events that could not be observed at all due to the time evolution of such events or could not be observed at required levels of fidelity without such real-time adaptations as adjusting focal-plane operating conditions or aiming of the focal plane in different directions to track such events. The basic concept of foveal imaging is straightforward: In imitation of a natural eye, a foveal-vision image sensor is designed to offer higher resolution in a small region of interest (ROI) within its field of view. Foveal vision reduces the amount of unwanted information that must be transferred from the image sensor to external image-data-processing circuitry. The aforementioned basic concept is not new in itself: indeed, image sensors based on these concepts have been described in several previous NASA Tech Briefs articles. Active-pixel integrated-circuit image sensors that can be programmed in real time to effect foveal artificial vision on demand are one such example. What is new in SyFT is a synergistic combination of recent advances in foveal imaging, computing, and related fields, along with a generalization of the basic foveal-vision concept to admit a synthetic fovea that is not restricted to one contiguous region of an image